| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor Schottky diode exhibiting a low diffusion potential at the time of evaluating electric characteristics while ensuring a good Schottky contact in which the electrical characteristic values can be grasped accurately. SOLUTION: A compound semiconductor single crystal comprising a group II element and a group VI element (e.g. a semiconductor single crystal of ZnSe, ZnS, CdSe, CdS) is coated, on the surface thereof, with a metal layer exhibiting Schottky type contact to form a Schottky electrode of a semiconductor Schottky diode. In such a method for forming a semiconductor Schottky diode, the surface of compound semiconductor single crystal is subjected to etching with a mixed liquid of bromine and methanol before being coated with a metal layer and then it is further subjected to etching with an aqueous solution containing NaOH or KOH. |
