| 摘要 |
PROBLEM TO BE SOLVED: To obtain a low power consumption, low voltage and high speed nonlinear element suitable to incorporate in an integrated circuit and a bistable memory employing it. SOLUTION: An n-type diffusion layer 22, an insulation layer 23, and a first aluminum electrode 25 are provided sequentially on a p-type silicon substrate 21. An impurity atom layer 23a doped with bivalent iron (Fe2+) having an empty orbit not occupied by an electron is formed in the insulation layer 23. A second aluminum electrode 26 is formed contiguously to the n-type diffusion layer 22. A voltage is applied between the first and second aluminum electrodes so that the first aluminum electrode has a higher potential. When the voltage is increased, a resonance tunnel current flows if the Fermi level of n-type diffusion layer 22 matches the energy level for occupying the empty orbit of Fe2+ with an electron. When the element enters subsequently into nonresonant state, it exhibits negative resistance characteristics where the current decreases as the voltage increases. |
