发明名称 TOTAL REFLECTION FLUORESCENT X-RAY ANALYZING WAFER
摘要 PROBLEM TO BE SOLVED: To provide a wafer in which the peak of a fluorescent X-ray generated from a semiconductor substrate itself is not superposed with that of P, Al, Mg, Na for light element analysis of the Al, Na on the surface of the substrate by a total reflection fluorescent X-ray analyzer. SOLUTION: A thin film 2 containing element (F, O, N, C, B, Be, Li, H) having smaller atomic number than Na and having a thickness of 100 angstroms or more is formed on the surface of a board 1.
申请公布号 JPH0943171(A) 申请公布日期 1997.02.14
申请号 JP19950193556 申请日期 1995.07.28
申请人 NEC CORP 发明人 HIROSHIMA SHOICHI
分类号 G01N23/223;G01N1/28;H01L21/66 主分类号 G01N23/223
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