| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a peripheral circuits which can be driven with a high drive voltage by constituting a complementary type by connecting p channels and n channels each in plural numbers in series, and connecting the outputs thereby constituting a complementary type. SOLUTION: The source regions 134 and 136 and the drain regions 136 and 138 of n-channel film transistors connected in series are made by implantation of p ions, and at the same time, channel regions 135 and 137 are made. The source region 141 and the drain region 143, and further the source region 143 and the drain region 145 of p-channel type film transistors connected in series are made by implantation of ions. A group of p and n film transistors connected in series are constituted complementary by electrodes 148. Hereby, this has high breakdown strength and can perform a high-speed operation, and the yield in manufacturing and the productivity can be raised.</p> |
