| 摘要 |
<p>PROBLEM TO BE SOLVED: To raise chemical resistance and insulation breakdown strength of crossed wiring and get a reliable film semiconductor device where the occurrence of defects is suppressed by making a composite insulating pad, which is interposed in the crossed lower wiring and upper wiring, contain at least a lower insulating film, a middle semiconductor film, and an upper insulating film, and doing other such like matters. SOLUTION: This is a film semiconductor device where at least a film transistor 2 and wiring part 3 are stacked on an insulating substrate 1, and the wiring part 3 has a lower wiring 4 and an upper wiring 5 patterned on the insulating substrate 1 and a composite insulating pad 6 interposed at least in the crossing of both wirings 4 and 5. And, the composite insulating pad 6 contains at least a lower insulating film 7, a middle semiconductor film 8, and an upper insulating film 9. For example, the film transistor 2 a gate electrode 11 contained in one part of the lower semiconductor film 8, a gate insulating film 12 in the same layer as the lower insulating film 7, an active layer 13 consisting of the middle semiconductor film 8, and a channel protective film 14 in the same layer as the upper insulating film 9.</p> |
