| 摘要 |
<p>The disclosure relates to a carrier layer (100) and a contact (118) enabled by the carrier layer which enables the fabrication of aluminium (including aluminum alloys and other conductive material having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches (113) having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer (100) in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material (110) which operates in conjunction with the electrical contact. The carrier layer preferably comprises a layer (112, 114, 116) formed by ionizing the flux of sputter deposition material, partially reacting the flux with a gas, and depositing the resulting material on a substrate. <IMAGE></p> |
