发明名称 |
Thermal annealing of semiconductor devices |
摘要 |
<p>A method of processing a semiconductor device in which a microwave field is generated to surround the semiconductor device while a focussed electron beam or ion beam is applied to the substrate of the device whereby the presence of the electron or ion beam creates a conductive region which increases the microwave field intensity in that region, so that the intensified microwave field creates a local heating effect in the substrate to perform a local annealing action.</p> |
申请公布号 |
EP0498055(B1) |
申请公布日期 |
1997.02.12 |
申请号 |
EP19910120367 |
申请日期 |
1991.11.28 |
申请人 |
MOTOROLA SEMICONDUCTEURS S.A. |
发明人 |
GAY, HENRI;GRIOT, DENIS;PAGES, IRENEE |
分类号 |
H01L21/265;H01L21/263;H01L21/324;(IPC1-7):H01L21/324;H01J37/00 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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