| 摘要 |
A method of forming a capacitor in a bonded wafer using the same process steps used to form integrated circuit devices in the bonded wafer. The bonded wafer may comprise a device wafer and a handle wafer, each of which forms a capacitor plate, bonded together with a dielectric therebetween. The device wafer may be divided into one or more insulated islands for the formation of integrated circuit devices, and a dummy island external of the insulated islands. One or more capacitor plates may be formed from the dummy island in the device wafer. The device wafer may include buried layers and an isolation trench along an outer edge separating the semiconductor material of the die from the wafer. The wafer may also be formed by the ZMR and SIMOX processes. In addition, other circuit structures such as thin film resistors may be formed on or above the upper insulator.
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