Low voltage triggering silicon controlled rectifier structures for ESD protection

摘要

Silicon controlled rectifier (SCR) structures are provided that are triggered by lightly doped diffusion (LDD) junction breakdown voltages of approximately 4-10 V. The SCR structures eliminate the need for the field plate diode and resistor secondary protection elements found in conventional SCR-based ESD protection circuits, thus minimizing RC delay on the signal line and reducing circuit size. The SCR structures are compatible with existing CMOS processes and are scalable to submicron technology.