| 摘要 |
PROBLEM TO BE SOLVED: To provide such a treating method of waste gas from the production process of semiconductors that a harmful component can be removed at high removing rate from the waste gas without contaminating the environment of the production process of semiconductors due to alkali metals and the running cost is low. SOLUTION: In the treating method to remove a harmful component from the waste gas from the production process of semiconductors, the waste gas 1 is mixed with ammonia and/or quaternary ammonium hydroxide 2 to control pH to 81-10, brought into contact with a detergent 5, then brought into contact with water 9 (in a zone 8), and further introduced to an adsorption tower 11 packed with a chemical which removes the residual component. As for the chemical to be supplied in the adsorption tower, one or more kinds are selected from alkali-added activated carbon, metal oxides and ion exchange resin. |
