| 摘要 |
PROBLEM TO BE SOLVED: To obtain the subject structure without deteriorating a superconducting thin film by depositing a high-temp. superconducting thin film on a silicon substrate. SOLUTION: This high-temp. superconducting thin film structure consists of the silicon substrate 1, a platinum silicide (PtSi) thin film 2 deposited on this substrate, strontium ruthenite (SrRuO3 ) thin film 3 deposited on this thin film and the high-temp. superconducting film 4 deposited on this thin film. An LnBa2 Cu3 O7 -δ(Ln: Y, La, Er, Eu, Gd, Dy, Ho) system or a Tlx Bay Caz Cuu Ov (the combination of x:y:z:u:v is any among three kinds of 2:2:2:3:10, 1:2:2:3:9, 1:2:3:4:11) system is used for the high-temp. superconducting film 4.
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