COMPOSITION FOR FORMATION OF POSITIVE METAL OXIDE THIN FILM PATTERN AND FORMING METHOD OF POSITIVE METAL OXIDE THIN FILM PATTERN

摘要

PROBLEM TO BE SOLVED: To form a positive metal oxide thin film pattern by a solgel method. SOLUTION: This compsn. for formation of a positive metal oxide thin film pattern contains a metal alkoxide and a compd. which generates an etching assistant by irradiation of light. The compsn. is applied on a substrate and irradiated with light so that the difference in the solubility between the irradiated part and the non-irradiated part due to the photolytic reaction in the irradiated part is used for patterning. The metal alkoxide reacts with the etching assistant produced by irradiation of light and changed to be soluble with a solvent. In the irradiated part, the metal alkoxide becomes soluble with a solvent, while in the non-irradiated part, a hydrolyzable metal alkoxide is hydrolyzed with the water content in air to produce a metal hydroxide which is insoluble with the solvent. By developing the film with a solvent after irradiation of light, only the irradiated part is dissolved and removed, while the non- irraditated part remains to form a positive metal oxide thin film pattern.