| 摘要 |
PROBLEM TO BE SOLVED: To rapidly form a thin film on a substrate by sputtering. SOLUTION: A film is formed on a substrate by using MgF2 granules 3 having 0.1-10mm granular size as the target. While a gas containing at least nitrogen is introduced into a vacuum chamber 1, high-frequency power of >=2W/cm<2> is applied from a sputtering RF power supply 6 on the target to produce plasma on the target to increase the temp of the target surface by the plasma. Both of the target and the vapor from the target are sputtered to from a film on the target. |
