发明名称 PHOTOMASK, MANUFACTURE OF PHOTOMASK, FORMATION OF PATTERN, MANUFACTURE OF SEMICONDUCTOR DEVICE, AND DEVICE FOR DESIGNING MASK PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a photomask which prevents an unnecessary pattern from being transferred by preventing an unnecessary projection image from being formed. SOLUTION: This photomask consists of an area which is translucent to at least exposure light and a transparent area, and the phase differences between lights passing through the translucent area and transparent area is substantially 180 deg., and an auxiliary pattern 5 which is transparent and in phase with a main pattern 4 formed out of the transparent area is arranged in an area wherein the angle of the intersection of two desired sides 34 and 35 of the main pattern 4 or their prolongations is <=180 deg. at a translucent phase shift part 6.
申请公布号 JPH0934098(A) 申请公布日期 1997.02.07
申请号 JP19950183673 申请日期 1995.07.20
申请人 HITACHI LTD 发明人 HASEGAWA NORIO;HAYANO KATSUYA;TERASAWA TSUNEO;SHIGENIWA AKIYOSHI;OKAZAKI SHINJI
分类号 G03F1/32;G03F1/36;G03F1/68;G03F1/70;G03F7/20;H01L21/027 主分类号 G03F1/32
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