| 摘要 |
PROBLEM TO BE SOLVED: To provide the image display device which has light shielding mechanism formed so that a leakage current at a MOS transistor part can be suppressed. SOLUTION: A source region 38 and a drain region 39 are formed corresponding to one main surface of a semiconductor substrate, a gate electrode 35 is formed across a gate oxide film, and a gate lead-out wire (scanning line) 36 and an electrode 37 for auxiliary capacity are formed and covered with an inter-layer insulating film 40. A source wire 41 and a wire 42 which serves as a drain electrode are formed thereupon, a film 43 is formed of a conductive material which has a large coefficient of light absorption on its surface, and further a reflection electrode 46 is formed across a film 45 formed of a conductive material with a large coefficient of light absorption to complete a reflection- electrode side substrate. On this substrate, a transparent electrode 47 joined to glass across a layer of liquid crystal 49 is set opposite and wires 36 and 41 are formed covering the gap part of the reflection electrode 46 formed with an adjacent part, thereby cutting off light reaching a surface of the semiconductor substrate. |
