| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to enhance transfer accuracy by constituting a first layer of a material suitable for formation of fine transfer patterns and suppressing the thermal deformation of regions, where patterns are generated, with a second layer. SOLUTION: A mask 11 is a so-called stencil mask produced by forming through-holes 13 of electron beams on a silicon mask substrate 12. This mask substrate 12 is formed into a disk shape and the outer peripheral surface thereof is provided with a mask holding part 120 of a large thickness. The inner side of the mask holding part 120 is provided with pattern forming parts 121 formed as a thin film by etching, etc. A diamond film 14 is fixed to the entire area on the rear surface of the pattern forming parts 121 and a tungsten film 15 is fixed to the entire area of the rear surface of the diamond film 14. The diamond film 14 is laminated by vapor phase synthesis on the rear surface of, for example, the mask substrate 12. In such a case, the second layer 14 having the small coefft. of linear expansion is thermally deformed less than the first layer 121 and, therefore, the thermal deformation of the pattern generating region is suppressed. |
