| 摘要 |
PROBLEM TO BE SOLVED: To make the shape of a tip fixed and to form the tip at a desired position by forming the tip by an epitaxial growth on an elastic body prepared by processing a single-crystal substrate. SOLUTION: An SiO2 layer 4 is deposited on the surface of a single-crystal GaAs substrate 3 having a (111) B plane, by using plasma CVD. Regular-triangle-shaped opening parts having sides parallel to a (110) equivalent plane of GaAs are formed by processing the layer 4 by reactive ion etching or the like and tips 1 of a height 10μm are formed by selective growth of the GaAs. Next, Cr and Au are deposited by a sputtering method and wiring electrodes 16 and capacitance electrodes 15 are formed thereof. After layers 4 are deposited on the surface and the rear of the substrate 3, these layers 4 are patterned and the substrate 3 is etched by using a mixed water solution of H2 SO4 , H2 O2 , and H2 O, with a substrate thickness 6μm left as it is and until the substrate is pierced from the opposite sides, whereby elastic bodies 2 are prepared. After the layers 4 on the surfaces are removed, lastly, an end processing of the surfaces of the tips 2 is conducted by using (NH4 )2 S.
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