| 摘要 |
PROBLEM TO BE SOLVED: To improve insulation characteristics between the plate electrode of a capacitor and a bit line, by forming a dielectric film on a storage electrode, forming a plate electrode on the dielectric film, and forming a bit line which is in contact with an impurity region via bit line contact. SOLUTION: A polycrystalline silicon film is etched back deeper than the deposition thickness, and left on a dielectric film 48 and only in the recessed part of an upper protective layer 46, thereby forming a plate electrode 50 on the dielectric film 48. Without using a mask, the plate electrode 50 is formed by self-alignment. An insulating film 51 is deposited over the whole surface of a substrate, and the substrate surface is flattened by heat treatment. A photosensitive film 52 is spread on the insulating film 51. The film 52 is used as a mask, and a bit line contact 53 is formed by etching an upper and a lower protective films 46, 38. Finally a bit line 54 is formed which comes into contact with an impurity region 36 through the bit line contact 53. |
