| 摘要 |
PROBLEM TO BE SOLVED: To improve SOA of an insulated gate type semiconductor device by making difficult for a parasitic transistor of an insulated gate type semiconductor device to turn ON. SOLUTION: A parasitic bipolar transistor formed of N<+> emitter region, P base layer and N<-> layer is set difficult to turn ON by providing P<+> semiconductor layer 45 having impurity concentration higher than that of the N' emitter region 44 in such a manner that it overlaps with the end part adjacent to the N<+> emitter region 44 of U type IGBT and in contact with the P base region 43 at the bottom part. |
