| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine pattern forming method capable of attaining good pattern shape and sufficient depth of focus even on a substrate having small reflectivity. SOLUTION: In the method for forming the fine patterns an antireflection layer 3 is disposed between a resist 4 and a layer 2 to be processed by applying the resist 4 on the layer 2 to be processed on a semiconductor substrate 1 and exposing the resist 4, then developing the resist, and the resist having high transmittance is constituted by using a resin contg. org. cyclic hydrocarbon groups having a transmittance of >=70% to exposing light, such as KrF excimer laser (248nm), as the resist 4. |
