| 摘要 |
PROBLEM TO BE SOLVED: To increase a potential barrier in the case of application to a quantum effect device, by using supper lattice structure wherein first thin films formed by oxidizing or nitriding or oxidizing and nitriding semiconductor containing specific elements and second thin films made of semiconductor are alternately formed. SOLUTION: After a buffer layer 12 is grown on a substrate 11, supper lattice structure 15 is formed by repeatedly growing well layers 14 and barrier layers 13 containing Al as constituent element, in the respective thicknesses. A P-type layer 16 is crystal-grown in a specified thickness, and then the barrier layer 13 is oxidized. The interface of supper lattice structure having an oxidized or nitrided barrier layer becomes sharp. The energy gap of an oxidized or nitrided layer remarkably widens, so that the barrier layer also becomes high. As a result, the second quantum level is sufficiently isolated, and resonance tunnel effect, quantum effect, etc., remarkably appear at a room temperature and a high temperature. |
