| 摘要 |
PROBLEM TO BE SOLVED: To reduce chip area, increase the freedom of design, and improve electrostatic breakdown strength. SOLUTION: Common discharge wires 12a, 12b, 12c, bonding pads 14a, 14b, 14c which are directly connected with the common discharge wires, and a plurality of bonding pads 13a, 13d, 13e, 13h, 13b, 13f, 13c, 13g are arranged in a plurality of regions of a semiconductor chip 10, independently from each other. An inner lead 22 for discharge which is connected with the bonding pads 14a-14c through a bonding wire 30 and stuck and fixed on the surface of the semiconductor chip 10 is arranged. |
