| 摘要 |
PROBLEM TO BE SOLVED: To enhance the performance of a semiconductor laser and the like by arranging a carrier injection region symmetrically to an optical waveguide. SOLUTION: A first clad layer 2 of first conductivity type, an active layer 3, a second lower clad layer 4A of second conductivity type, a current constriction layer 5 of first conductivity type, and a semiconductor layer 6 for causing difference of refractive index are sequentially grown epitaxially on a substrate 1. A stripe-like opening of specified width is then made by etching until the interface of current constriction layer 5 and second lower clad layer 4A is reached. Any one of the semiconductor layer 6 or current constriction layer 5 is then subjected to selective etching to form a semiconductor layer for causing difference of refractive index or second etching for enlarging the opening of current constriction layer. Finally, a second upper clad layer of second conductivity type is grown epitaxially and contiguously to the second lower clad layer through the opening in the semiconductor layer for causing difference of refractive index and current constriction layer 5. |
