LIGHT EMITTING/RECEIVING ELEMENT AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a light emitting/receiving element, and a fabrication method thereof, in which high light emitting quantity and light receiving quantity can be attained with high efficiency. SOLUTION: A Zn doped P type diffusion region 2 is formed on an N type GaAsP or N type GaAlAs epitaxial substrate 1 thus forming a PN junction closely to the end face of substrate and the driving voltage is switched to emit light or receive light.