| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film transistor where an ion implantation process which can implant ions with one ion implantation and is simpler than a conventional process is included, throughput is proper and cost can be reduced, and a thin-film transistor with a specific performance and reliability can be realized. SOLUTION: After eliminating a gate insulation film 103 covering an active layer 102 at a part for forming source/drain regions 105a and 105b by etching, an impurity is implanted to the active layer 102 at the exposed part, thus directly injecting the impurity into the active layer 102 and hence effectively injecting the impurity at a low acceleration voltage, utilizing, for example, photo resist which can be extremely easily machined when manufacturing a TFT substrate where n and p types are mixed, and easily manufacturing a thing-film transistor with a small number of processes.</p> |
