METHOD FOR SIMULATING TRANSFER LIGHT INTENSITY DISTRIBUTION, METHOD FOR CORRECTING MASK PATTERN, AND MASK, EXPOSURE METHOD, AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To make it possible to exactly simulate transfer patterns at a high speed by forming a photomask image for simulation and executing light intensity simulation by using the same. SOLUTION: Triangular shapes are added or deleted to and from all the corners of designed patterns according to prescribed rule to determine the photomask image for simulation having the corner rounding of the mask. Rectangular equilateral triangles having length (a) on two sides are deleted from the projecting angles in this rule. The rectangular equilateral triangles having length (a) on the two sides are added to recessed angles. The two-dimensional relative light intensity distribution at just focus and defocus is determined by a light intensity simulator of scalar diffraction theory under exposure conditions by using the photomask image for simulation having such corner rounding. Further, contour lines are determined and the regulated patterns are decided as resist patterns.