| 摘要 |
PROBLEM TO BE SOLVED: To prevent misfit transition by composing an n-layer of a specific semiconductor added with donor impurities for substantially equalizing the lattice constant with that of an emission layer while composing a p-layer of a specific semiconductor added with acceptor impurities having a band gap larger enough to confine the injected electrons in the emission layer. SOLUTION: A butter layer 2 of AlN is formed on a sapphire substrate 1 and then a silicon doped N<+> layer 3 having high carrier concentration of GaN, a silicon doped n-layer 4 of GaN, an emission layer 5 of In0.07 Ga0.93 N, a magnesium doped p-layer 61 of Al0.08 Ga0.92 N, and a magnesium doped contact layer 62 of GaN are formed sequentially thereon. Since both N<+> layer 3 and N layer 4 are composed of GaN, misfit lattice does not exist between these layers. Furthermore, misfit transition of emission layer 5 incident to the misfit lattice between the n-layer 4 and emission layer 5 can be prevented because misfit of lattice is insignificant between the GaN and the In0.07 Ga0.93 N. |
