| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which can easily increase storage capacitance without increasing the number of processes and step-difference, regarding a semiconductor device having various kinds of electrodes like a DRAM. SOLUTION: An electrode layer 26a is formed (A). In this dry etching process (B), the superfluous electrode layer 26a is eliminated by etching, and the working surface 26b of the exposed electrode 26 is roughened. Before the electrode layer 26a, a stopper layer 22 is formed, and the roughening of a surface is performed by etching, while the etching condition is so adjusted that a protective layer to be formed on the working surface 26b of the electrode 26 can be easily eliminated (for example, oxygen flow rate is increased, or applied high frequency power is decreased), and successively by a specified amount of over etching under the same condition. This electrode working method can be applied to the manufacturing of a semiconductor device having a stack type or a fin type or a cylindrical type storage capacitor, e.g. what is called a DRAM, and capacitor formation is ended. |
