MASK PATTERN CORRECTING METHOD AND MASK USING THE METHOD, AND EXPOSURE METHOD, AND SEMICONDUCTOR DEVICE USING THE MASK

摘要

PROBLEM TO BE SOLVED: To provide a means which produces a high-performance device at high yield by calculating a mask pattern with which a regist pattern close to a design pattern can be obtained. SOLUTION: This is a correcting method which deforms the mask pattern of a photomask used for a photolithography process so that a transfer image close to a desired design pattern can be obtained. Plural evaluation points are arranged along the outer circumference of the desired design pattern and the transfer image obtained when exposure is performed under specific exposure conditions is simulated by using the photomask of the design pattern given the evaluation points, and differences between the simulated transfer image and design pattern are compared for every evaluation point and the design pattern is deformed depending upon the differences compared for every evaluation point so that the differences become small. In an evaluation point arranging process, evaluation points are arranged at the corner parts of the desired design pattern and evaluation points are further arranged at the side parts of the pattern at specified intervals.