| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a diffused replenishing electron source with high brightness and a long life by connecting a high melting point metal single crystal wire to the tip of a high melting point metal filament, and applying slurry prepared with replenishing source powder and a nitrocellulose-containing organic solvent to the connecting part. SOLUTION: A single crystal wire made of a high melting point metal having an axial orientation of <100> is connected to the peak of the central end binding part of a filament 2 made of high melting point metal, then a single crystal chip 1 is formed by electrolytic polishing. Slurry prepared with replenishing source powder 3 and a nitrocellulose-containing organic solvent (isoamyl acetate or the like) is applied to the connecting part of the filament 2 and the single crystal chip 1, then they are heated in vacuum to sinter the replenishing source powder 3. The filament 2 and the single crystal wire are made of a fine wire of either one of W, Mo, and Re, and the replenishing source powder is made of the powder of at least one metal selected from the group comprising Ti, Zr, Hf, Y, Th, Sc, Be, and Ba. A diffusion replenishing type electron source with high stability and high production yield can be obtained.</p> |
