| 摘要 |
PROBLEM TO BE SOLVED: To obtain a removing soln. not requiring rinsing with a special rinsing soln. and having superior removing performance and dissolving abililty even to a photoresist film post-baked at a high temp. or a photoresist film exposed to plasma or ions. SOLUTION: This removing soln. for removing a photoresist film formed on a substrate by coating consists of amino-alcohol (A), N,N-dimethylformamide (B) and glycol monoalkyl ether (C). The amt. of the component A is 5-38wt.%, the total amt. of the components B, C is 95-62wt.% and the weight ratio of the component C to the component B is 0.05-0.8. |
