SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor laser element performing laser operation in blue violet wavelength region under the room temperature. SOLUTION: A waveguide stripe of Nitride material is formed in the direction parallel with the (11-20) A face of a (0001) C face sapphire substrate 1 by selective growth using an insulation film mask 4. The interval W1 of insulation film SiO2 mask 4 is set in the range of 1-2μm and the mask width W2 is set in the range of 5-30μm. It is then covered with an insulation film 8 and p and n electrodes are deposited by lithography before being scribed by cleavage. Consequently, a low loss optical waveguide layer can be formed while controlling the cross-section rectangularly and a transverse mode controlled BH structure for guiding the basic transverse mode stably can be realized by the actual difference of refractive index. The inventive element oscillates under the room temperature at an oscillation wavelength in the range of 410-430nm.