SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent erroneous writing at erasure ending time without increasing erasing time by adding short-circuiting MOSFETs between data lines constituting a memory array and a source line. SOLUTION: A semiconductor storage device is provided with a data-line discharge circuit DC and short-circuiting MOSFETs which have large conductances and are selectively and simultaneously turned on upon receiving high-level short circuit control signals DE at erasure ending time between data lines D0-Dr constituting a memory array MARY and a source line SL. Therefore, a nonselected memory cell NC can be prevented from being set to a writing state, because the charges accumulated in the data line D1, etc., are mainly transferred to the source line SL through the short-circuiting MOSFFTs and the discharge current which is connected to a nonselected word line W1 and flows to the source line SL through the nonselected memory cell NC becomes a sufficiently small value.