摘要 |
<p>PROBLEM TO BE SOLVED: To decrease manufacture processes and increase the manufacture yield by extending an end part of a semiconductor layer from an end part of a source metal electrode along channel length. SOLUTION: A source electrode SD 1 is formed on an (i) type semiconductor layer AS and an N type semiconductor layer d0 formed inside a 1-pixel area, and the end part of the source metal electrode SD 1 is extended from the end part of the (i) type semiconductor layer AS at least along the channel length. Further, a transparent pixel electrode ITO 1 composed of a conductive film d2 on it is connected to the source electrode SD 1 through an opening part CN bored in a protective insulating film PSV 1 and formed on the protective insulating film PSV 1. Then a light shield electrode SKD overlaps with the pixel electrode ITO 1 along a drain line DL in plane structure to block the part below a data line DL. In sectional structure, on the other hand, the light shield electrode SKD are insulated and separated by the data line DL, gate insulating film G1, and semiconductor layers AS and d0.</p> |