| 发明名称 |
PHASE SHIFT MASK BLANK AND PRODUCTION METHOD THEREFOR |
| 摘要 |
A phase shift mask blank including a translucent film containing silicon, nitrogen and a transition metal selected from the group consisting of tungsten, tantalum, chromium and titanium on a transparent substrate, wherein the proportion of nitrogen in the translucent film is 5 to 70 at%. Since the translucent film has a small surface roughness (nmRa), an excellent phase shift mask can be obtained by patterning the blank. |
| 申请公布号 |
WO9704360(A1) |
申请公布日期 |
1997.02.06 |
| 申请号 |
WO1995JP01432 |
申请日期 |
1995.07.19 |
| 申请人 |
HOYA CORPORATION;MITSUI, HIDEAKI;MATSUMOTO, KENJI;YAMAGUCHI, YOICHI |
发明人 |
MITSUI, HIDEAKI;MATSUMOTO, KENJI;YAMAGUCHI, YOICHI |
| 分类号 |
F02G5/00;F02M45/04;F02M47/00;F02M47/02;F02M51/06;F02M57/02;F02M59/10;F02M59/36;F02M59/46;F02M63/00;G03F1/00;G03F1/32;G03F1/68;H01L21/027 |
主分类号 |
F02G5/00 |
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