ELECTRICALLY ERASABLE AND PROGRAMMABLE NON-VOLATILE STORAGE LOCATION

摘要

The invention concerns an electrically erasable and programmable non-volatile storage location which consists of only one MOS transistor formed by a source-channel-drain junction. According to the invention, a semiconductor substrate (1) of a first type of conductivity contains a drain region (2) and a source region (3) of a second type of conductivity with opposite polarity to the first type of conductivity. The transistor also comprises a gate electrode (4) which has floating potential and is electrically insulated from the drain region (2) by a tunnel oxide (5) and from a channel region (9) located between the drain and source regions (2, 3) by a gate oxide (5; 10). The gate electrode (4) extends in the source-channel-drain direction at least over part of the channel region (9) and part of the drain region (2). The transistor finally comprises a control electrode (7) which is electrically insulated from the gate electrode (4) by a coupling oxide (8).