Verfahren zur Bildung eines Einkristall-Diamantfilms

摘要

A method of forming a single crystal diamond film in which a single crystal diamond film of large area can be formed at low cost, thereby making it possible to realize a large improvement in the properties of the diamond and also making possible the practical use of diamond in a wide range of applications thereof, said method comprising the steps of: first vapor-depositing a platinum film 2 on a first substrate 1, pressing a second substrate 3 onto the platinum film 2, and carrying out annealing in a vacuum. Next the platinum film 2 and the first substrate 1 are mechanically separated from each other, and the join surface 2a of the platinum film that had once been joined to the first substrate 1 is subjected to a surface scratching treatment, after which diamond is formed by gas-phase synthesis on this join face 2a. A single crystal diamond film is obtained in this way. In the case that the vapor-deposited platinum film has a thickness of no less than 20 mu m, the platinum film 2 and the first substrate 1 can be mechanically separated from one another without pressing a second substrate 3 onto the platinum film 2, and a single crystal diamond film can be similarly formed by the gas-phase synthesis of diamond on the join face 2a of the platinum film 2 that had once been joined to the first substrate 1.