RADIATION HARDENED CHARGE COUPLED DEVICE

摘要

A structure and method is described for fabricating a nuclear radiation induced damage resistant P-type buried channel charge-coupled device (10) which converts an optical image focused thereon into a time varying electrical signal. The invention uses a differntially related high level dosing of dopant in the buried channel (16) accompanied by processing at minimum effective temperatures, thereby enhancing device tolerance to exposure to nuclear radiation induced displacement and ionization damage which otherwise would degrade the imaging performance of the device.