An active region (6) in an SOI substrate is completely surrounded by a pit (4) filled with insulating material. A first doped region (8) contiguous to the pit is formed in particular by diffusion out of a doped layer on the wall of the pit (4). The first doped region (8) and a second doped region (12) form a pn-junction of a photodiode.
申请公布号
DE19528573(A1)
申请公布日期
1997.02.06
申请号
DE19951028573
申请日期
1995.08.03
申请人
SIEMENS AG, 80333 MUENCHEN, DE
发明人
OPPERMANN, KLAUS-GUENTER, DIPL.-PHYS., 83607 HOLZKIRCHEN, DE
