METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE WITH A CAPACITOR

摘要

The capacitor comprises a storage electrode having a positive slope( >90deg.) to the surface of a semiconductor substrate whose all the side walls are plain. The storage electrode comprises: a pilar electrode having more than one pillar; a cylindrical electrode having more than one cylinder separated with the outer part of the pillar electrode; and a bottom electrode connecting the pillar electrode with the cylindrical electrode.