Dual dielectric capping layers for hillock suppression in metal layers in thin film structures.

摘要

A thin film structure comprising a substrate (52), a metal layer (54) supported by said substrate, a first dielectric layer (56) deposited over the metal layer and a second dielectric layer (58) deposited over the first dielectric layer. The temperature of deposition of the first dielectric layer should be chosen low enough so as to avoid stressing the metal layer and, thus, to keep the metal layer substantially hillock free during the deposition of the first dielectric layer. The second dielectric layer (58) may then be deposited at a higher temperature than the first layer (56).