| 摘要 |
<p>A high frequency, high power transistor is vertically isolated by providing a thermally conductive, electrically insulating substrate, upon which the transistor components (including collector, base, and emitter) are grown, positioned directly on the heat sink and a planar top surface formed on the transistor by the base metal contact, the emitter metal contact, and the collector metal contact. Vertical isolation improves the thermal management capabilities of the transistor. Moreover, such a vertically isolated transistor is well-adapted for lateral isolation, which solves the capacitance problems inherent in conventional devices. <IMAGE></p> |
