发明名称 Multichannel field effect device
摘要 A dual channel field-effect switching device is disclosed. The switching device includes two adjacent semiconductor regions of opposite polarity forming a PN junction therebetween. A gate structure overlying the semiconductor regions controls the presence of two electrically isolated conductive channels formed in selected portions of the semiconductor regions.
申请公布号 US5600160(A) 申请公布日期 1997.02.04
申请号 US19950376064 申请日期 1995.01.20
申请人 HVISTENDAHL, DOUGLAS D. 发明人 HVISTENDAHL, DOUGLAS D.
分类号 H01L27/092;H01L29/08;H01L29/10;H01L29/78;H01L29/786;(IPC1-7):H01L29/76 主分类号 H01L27/092
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