发明名称 |
Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces |
摘要 |
A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to support interdiffusion between the Cd-rich CdTe capping layer (12) and the HgCdTe substrate (10). Use of the CdTe capping layer (12) with a slight excess Cd maintains the surface of the HgCdTe substrate (10) in a metal-rich phase condition.
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申请公布号 |
US5599733(A) |
申请公布日期 |
1997.02.04 |
申请号 |
US19940342530 |
申请日期 |
1994.11.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WAN, CHANG-FENG;TREGILGAS, JOHN H. |
分类号 |
H01L21/469;H01L31/103;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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