| 摘要 |
In a process for manufacturing a bipolar transistor, an intrinsic base is formed by a selective epitaxial growth while the lower surface of a base electrode single crystal silicon film 33 and the surface of a collector epitaxial layer 3 are exposed. In this process, the intrinsic base 8 and an extrinsic base 34 are grown as a single crystal to form a self-alignment type bipolar transistor having a reduced parasitic capacitance between the base and the collector.
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