发明名称 FILM FORMATION
摘要 PROBLEM TO BE SOLVED: To easily form a thin film having a dense and smooth surface by supplying an aqueous solution of metallic compound into the plasma jet produced by means of a tungsten electrode and a nozzle electrode, allowing it to collide and to be laminated with and on the surface of a work, and forming a film on the surface. SOLUTION: A working gas is formed into plasmic state by means of the arc formed between a tungsten electrode 27 and a nozzle electrode 28 made of copper and sprayed as a plasma jet through a nozzle 40 at the end of the nozzle electrode 28. An aqueous solution, in which a metallic compound such as CuCl2 .2H2 O is dissolved, is supplied as film formation material into the plasma jet via an inlet 43 in a sprayed state, allowed to fly while being melted, allowed to collide with a work, and laminated on it, by which a film is formed on the surface of the work. By this method, the thin film of <=1&mu;m thick, having smooth surface, can be formed.
申请公布号 JPH0931621(A) 申请公布日期 1997.02.04
申请号 JP19950201849 申请日期 1995.07.17
申请人 HITACHI SEIKO LTD;NIMATA MASAMI 发明人 MITA TSUNEO;NIMATA MASAMI
分类号 C23C4/12 主分类号 C23C4/12
代理机构 代理人
主权项
地址