| 摘要 |
A method of field oxide formation which creates field oxides of comparatively uniform height between differently-spaced oxidation masks is disclosed. A patterned oxidation mask, typically silicon nitride, (possibly with underlying polysilicon) is formed. A blanket layer of polysilicon is formed and etched back, thereby filling spaces between closely-spaced portions of the oxidation mask and fillets between less-closely spaced portions. A thermal oxidation is performed to produce a field oxide. The field oxide has comparatively uniform height despite differences in oxidation mask spacing.
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