Suspended single crystal silicon structures and method of making same

摘要

Temperature-sensitive transducers and other circuitry are manufactured by an electrochemical post-processing etch on an integrated circuit fabricated using a conventional CMOS process. Tetramethyl ammonium hydroxide or another anisotropic etchant having similar characterisics is used to selectively etch exposed front-side regions of a p-type silicon substrate, leaving n-type wells suspended from oxide beams. Circuits in the n-wells are thermally and electrically insulated from the substrate.