发明名称 COMPOSITION ADJUSTMENT OF MELT FOR GROWING BISMUTH-SUBSTITUTED IRON GARNET FILM
摘要 PROBLEM TO BE SOLVED: To realize a desired supersaturation temperature in a few repetition by growing a Bi-substituted iron garnet film under specific conditions from a melt of a certain composition on a specified substrate. SOLUTION: Using a melt of a certain composition, a Bi-substituted iron garnet film is subjected to liquid phase epitaxial growth on a specified substrate. The supersaturation temperatureΔT defined as the difference between saturated temperature Ts and the growth temperature To at which the respective lattice constants of the substrate and the garnet film coincide with each other in the above epitaxial growth process is determined. When theΔT is out of a specified temperature range, at least one parameter of the two: R3 and RBi , defined as R3 =PbO/B2 O3 and RBi =Bi2 O3 /ζR2 O3 (R is Y or a rare earth element), is increased or decreased so thatΔT falls within the specified temperature range.
申请公布号 JPH0930898(A) 申请公布日期 1997.02.04
申请号 JP19950207351 申请日期 1995.07.24
申请人 FUJI ELELCTROCHEM CO LTD 发明人 UMEZAWA HIROMITSU;YASUMA YASUHIRO
分类号 G02F1/09;C30B19/02;C30B29/28;(IPC1-7):C30B29/28 主分类号 G02F1/09
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