Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity

摘要

According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 mu m, for adequate sensitivity, and an impurity concentration of at least 5x1020 atoms/cm-3, for adequate emission. According to a second aspect of the invention, a light-emitting and light-sensing diode has a doped region with a deep part and a shallow part, and the area of the shallow part is increased to enhance the sensitivity of the diode. This may be done by providing the doped region with a meandering edge, or with one or more interior islands, or by forming the deep and shallow parts separately.